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394 Reconfigurable combinational logic operations using triple-gated feedback field-effect transistors for logic-in-memory computing
Advanced Electronic Materials, Vol 12, Issue 4, e00536 (2026.02)
Dongi Kim, Yunwoo Shin, Hyojoo Heo, Kyoungah Cho and Sangsig Kim
393 Ternary half adder comprising reconfigurable triple-gated feedback field-effect transistors
Current Applied Physices, vol 84, 81-87 (2026.04)
Jaewook Lim, Juhee Jeon, Yunwoo Shin, Jeongyun Oh, Hyojoo Heo, Kyoungah Cho, Sangsig Kim
392 Dual Entropy Source Physical Unclonable Functions of Reconfigurable Feedback Field Effect Transistors with Polycrystalline Silicon Channels
Advanced Intelligent Systems, e202500919 (2026.03)
Taeho Park, Yunwoo Shin, Hyojoo Heo, Kyoungah Cho and Sangsig Kim
391 Quaternary true random number generator comprising gated p+-i-n+ diodes
SCIENCE CHINA Information Sciences, Vol 69, Issue 3, 132404 (2026.03)
Hyojoo Heo, Yunwoo Shun, Juhee Jeon, Taeho Park, Seungho Ryu, Kyoungah Cho and Sangsig Kim
390 Effect of Rising Time on AC Stress-Induced Performance Degradation in a-ITGZO Thin-Film Transistors
Nanomaterials, Vol 15, No. 12, 880 (2025.06)
Mingu Kang, Kyoungah Cho and Sangsig Kim
389 3-bit memory operation of capacitor-less one-transistor one-diode DRAM cell
SCIENCE CHINA Information Sciences, Vol 68, Issue 9, 199401 (2025.07)
Seungho Ryu, Kyoungah Cho and Sangsig Kim
388 Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes
SCIENCE CHINA Information Sciences, Vol. 68, Issue 6, 162401 (2025.05)
Juhee Jeon, Yunwoo Shin, Hyojoo Heo, Jaemin Son, Seungho Ryu, Kyoungah Cho and Sangsig Kim
387 Binary and ternary compatible NAND/NOR logic-in-memory cell constructed with single-gated feedback field-effect transistors
Materials Science in Semiconductor Processing, Vol. 190, 109357 (2025.05)
Donghyung Lee, Yunwoo Shin, Jaemin Son, Kyoungah Cho and Sangsig Kim
386 Stateful Full Adder Using Silicon Diodes
Advanced Intelligent Systems, 2400735 (2025.06)
Jaemin Son, Juhee Jeon, Kyoungah Cho and Sangsig Kim
385 Edge Detection and Graph Coloring by Network of Oscillatory Neuromorphic Devices Comprising Silicon Nanosheet-Gated Diodes
Nano Research, Vol 18, Issue 3, 94907214 (2025.03)
Yunwoo Shin, Hyojoo Heo, Kyoungah Cho and Sangsig Kim
384 Logic-in-memory Cell Enabling Binary and Ternary Boolean Logics
SCIENCE CHINA Information Sciences, Vol. 68, Issue 2, 122407 (2025.02)
Jeongyun Oh, Juhee Jeon, Yunwoo Shin, Kyoungah Cho and Sangsig Kim
383 Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings
Heliyon, Vol 10, Issue 13, E34134 (2024.07)
Mingu Kang, Kyoungah Cho, Minhyeok Seol, Sangsub Kim and Sangsig Kim
382 Delay characteristics of quasi-nonvolatile memory devices operating in positive feedback mechanism
Nanotechnology, Vol. 35, No. 41 (2024.07)
Jeongyun Oh, Juhee Jeon, Yunwoo Shin, Kyoungah Cho and Sangsig Kim
381 Binarized neural network comprising quasi-nonvolatile memory devices for neuromorphic computing
Advanced Electronic Materials, Vol. 10, Issue. 9 (2024.09)
Yunwoo Shin, Juhee Jeon, Kyoungah Cho and Sangsig Kim
380 Capacitorless Two-Transistor Dynamic Random-Access Memory Cells Comprising Amorphous Indium-Tin-Gallium-Zinc Oxide Thin-Film Transistors for the Multiply-Accumulate Operation
Advanced Materials Technologies, Vol. 9, Issue. 15 (2024.08)
Seungho Ryu, Mingu Kang, Kyoungah Cho and Sangsig Kim
379 Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels
Nanotechnology, Vol. 35, No. 27 (2024.04)
Hyojoo Heo, Yunwoo Shin, Jaemin Son, Seungho Ryu, Kyoungah Cho and Sangsig Kim
378 Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors
Nanomaterials, Vol. 14, No. 7, 562 (2024.03)
Jaemin Son, Juhee Jeon, Kyoungah Cho and Sangsig Kim
377 Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure
Scientific Reports, 14, 6446 (2024.03)
Jongseong Han, Jaemin Son, Seungho Ryu, Kyoungah Cho and Sangsig Kim
376 Binarized neural network of diode array with high concordance to vector-matrix multiplication
Scientific Reports, 14, 5891 (2024.03)
Yunwoo Shin, Kyoungah Cho and Sangsig Kim
375 Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors
Nanomaterials, Vol. 14, No. 6, 493 (2024.03)
Taeho Park, Kyoungah Cho and Sangsig Kim
374 Bidirectional Synaptic Operations of Triple-Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics
Advanced Electronic Materials, 2300764 (2024.06)
Yunwoo Shin, Jaemin Son, Juhee Jeon, Seungho Ryu, Kyoungah Cho and Sangsig Kim
373 Stateful Logic Operation of Gated Silicon Diodes for In-Memory Computing
Advanced Electronic Materials, 2300815 (2024.07)
Jaemin Son, Juhee Jeon, Kyoungah Cho and Sangsig Kim
372 Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States
Nanomaterials, Vol. 14, No. 2, 210 (2024.01)
Juhee Jeon, Kyoungah Cho and Sangsig Kim
371 Quasi-nonvolatile Memory Characteristics of Silicon Nanosheet Feedback Field-effect Transistors
ȸ, 27, 4ȣ, pp.386~390 (2023.12)
Seungho Ryu, Hyojoo Heo, Kyungah Cho and Sangsig Kim
370 Effects of Annealing on Electrical Characteristics of Double-Gated Silicon Nanosheet Feedback Field-Effect Transistors
ȸ, 27, 4ȣ, pp.418~424 (2023.12)
Hyojoo Heo, Yunwoo Shin, Jaemin Son, Seungho Ryu, Kyoungah Cho and Sangsig Kim
369 Reconfigurable Logic-in-Memory Cell Comprising Triple-Gated Feedback Field-Effect Transistors
Advanced Electronic Materials, 2300526 (2023.12)
Jongseong Han, Jaemin Son, Juhee Jeon, Yunwoo Shin, Kyoungah Cho and Sangsig Kim
368 Effect of dual gating on electrical characteristics of amorphous indium-tin-gallium-zinc-oxide TFTs
Electronics Letters, Vol. 59, No. 14, e12890 (2023.07)
Heesung Kong, Kyoungah Cho, Mingu Kang, Jaybum Kim, Sunhee Lee, Junhyung Lim and Sangsig Kim
367 Logic-in-Memory Characteristics of Reconfigurable Feedback Field-Effect Transistors with Double-Gated Structure
Advanced Electronic Materials, 2300132 (2023.06)
Yunwoo Shin, Jaemin Son, Juhee Jeon, Kyoungah Cho and Sangsig Kim
366 Effects of interface states on electrical characteristics of feedback field-effect transistors
IEEE Access, Vol. 11, 54692-54698 (2023.05)
Juhee Jeon, Kyoungah Cho and Sangsig Kim
365 Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
Micromachines, Vol. 14, No. 6, 1138 (2023.05)
Juhee Jeon, Kyoungah Cho and Sangsig Kim
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