logo

Publication

HOME > Publication > Journals

Journals

Welcome to KOREA nanotronics

   2024|
   2023|
   2022|
   2021|
   2020|
   2019|
   2018|
   2017|
   2016|
   2015|
   2014|
   2013|
   2012|
   2011|
   2010|
   2009|
   2008|
   2007|
   2006|
   2005|
   2004|
   2003|
   2002|
   2001|
   2000|
   1999|
   1992 - 1998
379 Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels
Nanotechnology, Vol. 35, No. 27 (2024.04)
Hyojoo Heo, Yunwoo Shin, Jaemin Son, Seungho Ryu, Kyoungah Cho and Sangsig Kim
378 Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors
Nanomaterials, Vol. 14, No. 7, 562 (2024.03)
Jaemin Son, Juhee Jeon, Kyoungah Cho and Sangsig Kim
377 Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure
Scientific Reports, 14, 6446 (2024.03)
Jongseong Han, Jaemin Son, Seungho Ryu, Kyoungah Cho and Sangsig Kim
376 Binarized neural network of diode array with high concordance to vector-matrix multiplication
Scientific Reports, 14, 5891 (2024.03)
Yunwoo Shin, Kyoungah Cho and Sangsig Kim
375 Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors
Nanomaterials, Vol. 14, No. 6, 493 (2024.03)
Taeho Park, Kyoungah Cho and Sangsig Kim
374 Bidirectional Synaptic Operations of Triple-Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics
Advanced Electronic Materials, 2300764, (2024.03)
Yunwoo Shin, Jaemin Son, Juhee Jeon, Seungho Ryu, Kyoungah Cho and Sangsig Kim
373 Stateful Logic Operation of Gated Silicon Diodes for In-Memory Computing
Advanced Electronic Materials, 2300815 (2024.01)
Jaemin Son, Juhee Jeon, Kyoungah Cho and Sangsig Kim
372 Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States
Nanomaterials, Vol. 14, No. 2, 210 (2024.01)
Juhee Jeon, Kyoungah Cho and Sangsig Kim
371 Quasi-nonvolatile Memory Characteristics of Silicon Nanosheet Feedback Field-effect Transistors
전기전자학회논문지, 27권, 4호, pp.386~390 (2023.12)
Seungho Ryu, Hyojoo Heo, Kyungah Cho and Sangsig Kim
370 Effects of Annealing on Electrical Characteristics of Double-Gated Silicon Nanosheet Feedback Field-Effect Transistors
전기전자학회논문지, 27권, 4호, pp.418~424 (2023.12)
Hyojoo Heo, Yunwoo Shin, Jaemin Son, Seungho Ryu, Kyoungah Cho and Sangsig Kim
369 Reconfigurable Logic-in-Memory Cell Comprising Triple-Gated Feedback Field-Effect Transistors
Advanced Electronic Materials, 2300526 (2023.10)
Jongseong Han, Jaemin Son, Juhee Jeon, Yunwoo Shin, Kyoungah Cho and Sangsig Kim
368 Effect of dual gating on electrical characteristics of amorphous indium-tin-gallium-zinc-oxide TFTs
Electronics Letters, Vol. 59, No. 14, e12890 (2023.07)
Heesung Kong, Kyoungah Cho, Mingu Kang, Jaybum Kim, Sunhee Lee, Junhyung Lim and Sangsig Kim
367 Logic-in-Memory Characteristics of Reconfigurable Feedback Field-Effect Transistors with Double-Gated Structure
Advanced Electronic Materials, 2300132 (2023.06)
Yunwoo Shin, Jaemin Son, Juhee Jeon, Kyoungah Cho and Sangsig Kim
366 Effects of interface states on electrical characteristics of feedback field-effect transistors
IEEE Access, Vol. 11, 54692-54698 (2023.05)
Juhee Jeon, Kyoungah Cho and Sangsig Kim
365 Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
Micromachines, Vol. 14, No. 6, 1138 (2023.05)
Juhee Jeon, Kyoungah Cho and Sangsig Kim
364 Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning
Micromachines, Vol. 14, No. 3, 504 (2023.02)
Sola Woo, Juhee Jeon and Sangsig Kim
363 Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors
Advanced Electronic Materials, 2201134 (2023.01)
Jaemin Son, Yunwoo Shin, Kyoungah Cho and Sangsig Kim
362 Universal logic-in-memory cell enabling all basic Boolean algebra logic
Scientific Reports, 12, 20082 (2022.11)
Eunwoo Baek, Kyoungah Cho and Sangsig Kim
361 Performance enhancement of hybrid energy devices using cooling patches
International Journal of Photoenergy 2022 (2022.10)
Jaehwan Lee, Kyoungah Cho, Yoonbeom Park, Sungeun Park, Hee-eun Song and Sangsig Kim
360 Effect of Channel and Gate Structures on Electrical Characteristics of Oxide Thin-Film Transistor
Journal of IKEEE, Vol. 26, No. 3, 500-505 (2022.09)
Heesung Kong, Kyoungah Cho, Jaybum Kim, Junhyung Lim and Sangsig Kim
359 Temperature-dependent electrical characterisrics of p-channel mode feedback field-effect transistors
IEEE Access, Vol. 10, 101458-101464 (2022.09)
Taeho Park, Jaehwan Lee, Jaemin Son, Juhee Jeon, Yeonwoo Shin, Kyoungah Cho and Sangsig Kim
358 New ternary inverter with memory function using silicon feedback field-effect transistors
Scientific Reports, 12, 12907 (2022.07)
Jaemin Son, Kyoungah Cho and Sangsig Kim
357 Annealing Effect on Thermoelectric Characteristics of Spin-coated Cu2Se Nanoparticle Thin Films
Chemical Physics Letters, 804, 139893 (2022.07)
Jaehwan Lee, Kyoungah Cho, Taeho Park and Sangsig Kim
356 Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors
Scientific Reports, 12, 12534 (2022. 07)
Juhee Jeon, Sola Woo, Kyoungah Cho and Sangsig Kim
355 Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping
Nanotechnology, Vol. 33, 4105203 (2022.07)
Taekham Kim, Doohyeok Lim, Jaemin Son, Kyoungah Cho and Sangsig Kim
354 Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor
Semiconductor Science and Technology, Vol. 37, 085016 (2022. 07)
Sola Woo and Sangsig Kim
353 Logic and memory characteristics of an inverter comprising a feedback FET and MOSFET
Semiconductor Science and Technology, Vol. 37, 065025 (2022.05)
Eunhyeok Lim, Jaemin Son, Kyoungah Cho and Sangsig Kim
352 Reconfigurable logic-in-memory using silicon transistors
Advanced Materials Technologies, 2101504 (2022. 05)
Doohyeok Lim, Kyoungah Cho and Sangsig Kim
351 Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor
Micromachines Vol, 13, 590 (2022.04)
Eunwoo Baek, Jaemin Son, Kyoungah Cho and Sangsig Kim
350 NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors
Scientific Reports, 12, 3643 (2022.03)
Yejin Yang , Juhee Jeon , Jaemin Son , Kyoungah Cho and Sangsig Kim
1 2 3 4 5 6 7 8 9 10