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369 籸 ǵ ȿ Ʈ --޸ Ư
2024 ѱȸ ϰмȸ, , ѹα/ 2024.08.12 - 2024.08.14
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368 Ʈ ǵ ȿ Ʈ
2024 ѱȸ ϰмȸ, , ѹα/ 2024.08.12 - 2024.08.14
̵, ſ, , ȣ, ,
367 Ʈ ǵ ȿ Ʈ ȭ
2024 ѱȸ ϰмȸ, , ѹα/ 2024.08.12 - 2024.08.14
赿, ſ, ȣ, ,
366 ǵ ȿ Ʈ ޸
2024 ѱȸ ϰмȸ, , ѹα/ 2024.08.12 - 2024.08.14
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365 Ʈ Ʈ ǵ ȿ Ʈ 3 籸 Ư
2024 ѱȸ ϰмȸ, , ѹα/ 2024.08.12 - 2024.08.14
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364 ä ǿ Ʈ a-ITGZO ڸƮ Ư
2024 ѱȸ ϰмȸ, , ѹα/ 2024.08.12 - 2024.08.14
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363 a-ITGZO TFT 2T0C DRAM
2024 ѱȸ ϰмȸ, , ѹα/ 2024.08.12 - 2024.08.14
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362 Short channel a-ITGZO ڸƮ Ư м
2024 ѱȸ ϰмȸ, , ѹα/ 2024.08.12 - 2024.08.14
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361 Ʈ ǵ ȿ Ʈ cascaded logic-memory
2024 ѱȸ ϰмȸ, , ѹα/ 2024.08.12 - 2024.08.14
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360 Ʈ ǵ ȿ ƮͿ Ȯ
2024 ѱȸ ϰмȸ, , ѹα/ 2024.08.12 - 2024.08.14
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359 ٰ Ǹ ǵ ȿ Ʈ Ư
2024 ѱȸ ϰмȸ, , ѹα/ 2024.08.12 - 2024.08.14
ȣ, ,
358 ǵ ȿ Ʈ ι PDN ڿ Ư
2024 ѱȸ ϰмȸ, , ѹα/ 2024.08.12 - 2024.08.14
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357 Ʈ ǵ ȿ Ʈ neural oscillation
31ȸ ݵüмȸ, ѹα / 2024.01.24 - 2024.01.26
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356 ä ̿ β FBFET 迭 IMP ŷڼ
31ȸ ݵüмȸ, ѹα / 2024.01.24 - 2024.01.26
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355 Ʈ a-ITGZO ڸ Ʈ ä Ư
31ȸ ݵüмȸ, ѹα / 2024.01.24 - 2024.01.26
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354 Ǹ ̾ FBFET ޸ Ư
31ȸ ݵüмȸ, ѹα / 2024.01.24 - 2024.01.26
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353 a-ITGZO ڸ Ʈ Al2O3/SiO2 Ʈ
31ȸ ݵüмȸ, ѹα / 2024.01.24 - 2024.01.26
α, , ,
352 ǵ ȿ Ʈ ó Ư
31ȸ ݵüмȸ, ѹα / 2024.01.24 - 2024.01.26
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351 Random dopant fluctuation FBFET Ư ȭ м
31ȸ ݵüмȸ, ѹα / 2024.01.24 - 2024.01.26
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350 ä 󵵿 ٰ Ǹ FBFET Ư
31ȸ ݵüмȸ, ѹα / 2024.01.24 - 2024.01.26
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349 ǵ ȿ Ʈ Ƿ Ư
31ȸ ݵüмȸ, ѹα / 2024.01.24 - 2024.01.26
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348 Effect of Injected Carrier Type on Switching Characteristics of Triple-gated Feedback Field-effect Transistors
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Hyojoo Heo, Yunwoo Shin, Juhee Jeon, Kyoungah Cho, Sangsig Kim
347 Reconfigurable Memory Operation of Triple-gated Feedback Field-effect Transistors
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Jeongyun Oh, Juhee Jeon, Kyoungah Cho, Sangsig Kim
346 Effect of dual gating on mobility and stability of amorphous indium-tin-gallium-zinc oxide thin film transistors
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Minhyeok Seol, Kyoungah Cho, Mingu Kang, Sangsub Kim, Sangsig Kim
345 Reconfigurable Logic Gates Using Triple-Gated Feedback Field-Effect Transistors
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Jongseong Han, Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim
344 Memory characteristics of capacitorless 2T DRAM cell composed of amorphous indium-tin-gallium-zinc oxide TFTs
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Seungho Ryu, Kyoungah Cho, Sangsig Kim
343 Electrical characteristics of amorphous indium-tin-gallium-zinc oxide thin-film transistors with bilayer channels
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Mingu Kang, Kyoungah Cho, Sangsub Kim, Sangsig Kim
342 Reconfigurable Characteristics of p+-n-i-p-n+ Silicon Nanowire Field-effect Transistors with Single-gated Structure
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Yunwoo Shin, Kyoungah Cho, Sangsig Kim
341 Junction Doping Gradient Induced Variability in Gate-all-around Feedback Field-effect Transistor
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Juhee Jeon, Kyoungah Cho, Sangsig Kim
340 Capacitorless 1T-DRAM comprising poly-silicon feedback field-effect transistor
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Taeho Park, Kyoungah Cho, Sangsig Kim
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