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2023
9 Quasi-nonvolatile Memory Characteristics of Silicon Nanosheet Feedback Field-effect Transistors
전기전자학회논문지, 27권, 4호, pp.386~390 (2023.12)
Seungho Ryu, Hyojoo Heo, Kyungah Cho and Sangsig Kim
8 Effects of Annealing on Electrical Characteristics of Double-Gated Silicon Nanosheet Feedback Field-Effect Transistors
전기전자학회논문지, 27권, 4호, pp.418~424 (2023.12)
Hyojoo Heo, Yunwoo Shin, Jaemin Son, Seungho Ryu, Kyoungah Cho and Sangsig Kim
7 Reconfigurable Logic-in-Memory Cell Comprising Triple-Gated Feedback Field-Effect Transistors
Advanced Electronic Materials, 2300526 (2023.10)
Jongseong Han, Jaemin Son, Juhee Jeon, Yunwoo Shin, Kyoungah Cho and Sangsig Kim
6 Effect of dual gating on electrical characteristics of amorphous indium-tin-gallium-zinc-oxide TFTs
Electronics Letters, Vol. 59, No. 14, e12890 (2023.07)
Heesung Kong, Kyoungah Cho, Mingu Kang, Jaybum Kim, Sunhee Lee, Junhyung Lim and Sangsig Kim
5 Logic-in-Memory Characteristics of Reconfigurable Feedback Field-Effect Transistors with Double-Gated Structure
Advanced Electronic Materials, 2300132 (2023.06)
Yunwoo Shin, Jaemin Son, Juhee Jeon, Kyoungah Cho and Sangsig Kim
4 Effects of interface states on electrical characteristics of feedback field-effect transistors
IEEE Access, Vol. 11, 54692-54698 (2023.05)
Juhee Jeon, Kyoungah Cho and Sangsig Kim
3 Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
Micromachines, Vol. 14, No. 6, 1138 (2023.05)
Juhee Jeon, Kyoungah Cho and Sangsig Kim
2 Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning
Micromachines, Vol. 14, No. 3, 504 (2023.02)
Sola Woo, Juhee Jeon and Sangsig Kim
1 Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors
Advanced Electronic Materials, 2201134 (2023.01)
Jaemin Son, Yunwoo Shin, Kyoungah Cho and Sangsig Kim