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2001
9 Microscopic Analysis of Defects in Direct Synthesized GaN Microcrystals
Journal of the Korean Physical Society Vol.39, ppS484-S487 (2001.12)
E. K. Koh, C. S. Park, Y. J. Park, E. K. Kim, S. S. Park, H. W. Shin, S. H. Choh, S. S.Kim, M. Y. Sung, I. W. Park
8 Structural Investigation of GaN Powders Thermally Annealed at Various Temperatures
Journal of the Korean Physical Society Vol.39, ppS488-S492 (2001.12)
J. K. Hong, K. T. Sun, S. Kim, C. S. Park, E. K. Koh, Y. J. Park, E. K. Kim, M. Y. Sung, I. W. Park
7 The Subbands and Resonant Tunneling of a Two-Dimensional Electron Gas in a Metal-Insulator-Semiconductor Structure
Japanese Journal of Applied Physics Vol.40, pp2201-2204 (2001)
Jin Ki Hong, Sangsig Kim, Man Young Sung, Yun Chul Chung, Sun Ung Kim, and Mann Jang Park
6 Excimer laser annealing of Er-implanted GaN
Journal of Applied Physics Vol.90, No.6, pp2760-2763 (2001.09)
Seuk Joo Rhee, Sangsig Kim, Christopher W. Sterner, Jeffrey O. White, and Stephen G. Bishop
5 Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN
Journal of Applied Physics, Vol.90, No.1, pp252-259 (2001.07)
S. Kim, R. L. Henry, A. E. Wickenden, D. D. Koleske, S. J. Rhee, J. O. White, J. M. Myoung, K. Kim, X. Li, J. J. Coleman, and S. G. Bishop
4 Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact to p-GaN
Japanese Journal of Applied Physics Vol.40, No.7 pp4450-4453 (2001.07)
Je Won Kim, Seong-Il Kim, Yong Tae Kim, Man Young Sung, In-Hoon Choi, Sangsig Kim
3 Simulation of a new lateral trench IGBT employing effective p+ diverter for improving latch-up characteristics
Microelectronics Journal Vol.32, pp749-753 (2001)
Ey Goo Kang, Sangsig Kim, Man Yuong Sung
2 Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN
Materials Science and Engineering Vol.B81, pp136-139 (2001)
S. Kim, S.J. Rhee, J.O. White, A.M. Mitofsky, X. Li, G.C. Papen, J.J. Coleman, and S.G. Bishop
1 Depth-Resolved Cathodoluminescence of III-V Nitride Films Grown by Plasma-Assisted Molecular Beam Epitaxy
Japanese Journal of Applied Physics Vol.40, pp476-479 (2001.02)
Jae-Min Myoung, Kyu-Hwan Shim, and Sangsig Kim