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259 Thermal conductivity measurement of boron nitride thermal adhesive by thermal flow measurement method
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Yoonbeom Park, Kyoungah Cho, and Sangsig Kim
258 Electrical characteristics of gate-all-around tunneling field-effect transistors with varying numbers of nanowire channels
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Sola Woo, Junsun Cho, Hyungu Kang, and Sangsig Kim
257 Electrical characteristics of silicon nanowire biristor devices
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Doohyeok Lim, and Sangsig Kim
256 Electrical characteristics of silicon nanowire feedback field-effect transistors with Pt nanocrystal storage nodes
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Yoonjoong Kim, and Sangsig Kim
255 Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation
2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Taiwan / 2018.04.16 - 2018.04.19
Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, and Sangsig Kim
254 Steep slope subthreshold characteristics of dual-gate feedback field-effect transistors
E-MRS 2018 Spring Meeting, Strasbourg, France / 2018.06.18 - 2018.06.22
Doohyeok Lim, Yoonjoong Kim, and Sangsig Kim
253 Non-volatile memory characteristics of silicon nanowire feedback field-effect transistors with storage nodes of Pt nanocrystals
E-MRS 2018 Spring Meeting, Strasbourg, France / 2018.06.18 - 2018.06.22
Yoonjoong Kim, and Sangsig Kim
252 ռ 鹰 źҹڸ ߿ Ư
25ȸ ݵüмȸ, , ѹα / 2018.02.05 - 2018.02.07
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251 Si 뼱 Ӻ Ag2Se ڸ Ư
25ȸ ݵüмȸ, , ѹα / 2018.02.05 - 2018.02.07
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250 Covered Source-Channel Tunnel Field-Effect Transistors with Trench Gate Structures
25ȸ ݵüмȸ, , ѹα / 2018.02.05 - 2018.02.07
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249 ÷ú ũ Ŀн  Ư
25ȸ ݵüмȸ, , ѹα / 2018.02.05 - 2018.02.07
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248 Ǹ ǵ Ʈ Ʈ
25ȸ ݵüмȸ, , ѹα / 2018.02.05 - 2018.02.07
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247 Ǹ 뼱 ̿ ȿ ̿ Ư
25ȸ ݵüмȸ, , ѹα / 2018.02.05 - 2018.02.07
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246 ũ ۵ n-ZnO/p-Cu2O Ư
25ȸ ݵüмȸ, , ѹα / 2018.02.05 - 2018.02.07
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245 Flexible supercapacitors constructed with drop-casted electrodes made of reduced graphene oxide-carbon black composite
The 43rd International Conference on Micro-and Nano-Engineering MNE2017, Braga, Portugal / 2017. 9. 18 – 2017. 9. 22
Kyunghwan Yang, Kyoungah Cho, and Sangsig Kim
244 Stretchable a-IGZO thin film transistors fabricated on stiffness-modulated substrates
The 4th International Conference on Advanced Electromaterials, Jeju, Korea / 2017.11.21 - 2017.11.24
Hyungjin Park, Kyoungah Cho, Hyungon Oh, and Sangsig Kim
243 Channel splitting effect on electrical characteristics of bendable a-IGZO TFTs
The 43rd International Conference on Micro-and Nano-Engineering MNE2017, Braga, Portugal / 2017.09.18 – 2017.09.22
Hyungon Oh, Kyoungah Cho, and Sangsig Kim
242 The Effect of Gate-to-Source/Drain Overlap in Nanowire CMOS Inverters
E-MRS 2017 Fall Meeting, Warsaw, Poland / 2017.09.18 - 2017.09.21
Jeuk Yoo, Yoonjoong Kim, Doohyeok Lim, and Sangsig Kim
241 Silicon Nanowire NOR Logic Gates on Bendable Substrates
E-MRS 2017 Fall Meeting, Warsaw, Poland / 2017.09.18 - 2017.09.21
Jeongje Moon, Yoonjoong Kim, Doohyeok Lim, Kyeungmin Im, and Sangsig Kim
240 Propagation delay characteristics of sub-10nm gate-all-around nanowire MOSFET Inverters
E-MRS 2017 Fall Meeting, Warsaw, Poland / 2017.09.18 - 2017.09.21
Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, and Sangsig Kim
239 Device modeling of n-channel silicon tunneling field-effect transistors for circuit simulation
The 43rd International Conference on Micro-and Nano-Engineering MNE2017, Braga, Portugal / 2017.09.18 – 2017.09.22
Sola Woo, Minsuk Kim, and Sangsig Kim
238 Thermoelectric characteristics of mixed ionic-electronic conductor Ag2Se thin films
The 43rd International Conference on Micro-and Nano-Engineering MNE2017, Braga, Portugal / 2017.09.18 – 2017.09.22
Seunggen Yang, Kyoungah Cho, and Sangsig Kim
237 Enhanced thermoelectric properties of ZnO:Al coated glass fibers
The 43rd International Conference on Micro-and Nano-Engineering MNE2017, Braga, Portugal / 2017.09.18 – 2017.09.22
Yoonbeom Park, Kyoungah Cho and Sangsig Kim
236 Bendable silicon nanowire bistable resistor for capacitor-less 1T-DRAM
NANO KOREA 2017, Gyeonggi-do, Korea / 2017.07.12 - 2017.07.14
Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim
235 Effect of deaeration processes on mechanical properties of substrates for stretchable electronic devices
2017 ѱȸ ϰ мȸ, , ѹα / 2017.07.06 - 2017.07.07
Hyungjin Park, Kyoungah Cho, Hyungon Oh, Sangsig Kim
234 Effect of carbon black on capacitive performance of flexible supercapacitors
2017 ѱȸ ϰ мȸ, , ѹα / 2017.07.06 - 2017.07.07
Kyungwhan Yang, Kyoungah Cho, Sangsig Kim
233 Effect of oxygen partial pressure as a process parameter on electrical characteristic of a-IGZO TFTs
2017 ѱȸ ϰ мȸ, , ѹα / 2017.07.06 - 2017.07.07
Hyungon Oh, Kyoungah Cho, Sangsig Kim
232 Effect of Channel Length on Electrical Characteristics of Silicon Nanowire Field Effect Transistors
2017 ѱȸ ϰ мȸ, , ѹα / 2017.07.06 - 2017.07.07
Jeongje Moon, Kyeungmin Im, and Sangsig Kim
231 Electrical Characteristics of Gate-All-Around Nanowire Transistors Depending on Placement of Channels using a 3D Device Simulator
2017 ѱȸ ϰ мȸ, , ѹα / 2017.07.06 - 2017.07.07
Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, and Sangsig Kim
230 Sputtering pressure effect on the electrical characteristics of amorphous In-Ga-Zn-O TFTs deposited on flexible substrates
2017 ݵü мȸ, , ѹα / 2017.02.13-2017.02.15
Hyungon Oh, Kyoungah Cho and Sangsig Kim
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