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231 Electrical Characteristics of Gate-All-Around Nanowire Transistors Depending on Placement of Channels using a 3D Device Simulator
2017 ѱȸ ϰ мȸ, , ѹα / 2017.07.06 - 2017.07.07
Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, and Sangsig Kim