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2018
21 Electrical characteristics of a silicon nanowire field-effect transistor on a plastic substrate
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Byoungwoo Park, Doohyeok Lim, Yoonjoong Kim, and Sangsig Kim
20 Electrical characteristics of silicon nanowire-based dual-gate feedback field-effect transistors
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Jaemin Son, Yoonjoong Kim, Doohyeok Lim, and Sangsig Kim
19 Electrical characteristics of stretchable a-IGZO TFTs
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Donghyun Kim, Kyoungah Cho, Hyungjin Park, Hyungon Oh, and Sangsig Kim
18 Effects of Gate Electrode Work Function and Gated Channel Doping Concentration on Turn-on and Turn-off Voltages of Feedback Field-effect transistors
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Hyungu Kang, Jinsun Cho, Sola Woo, and Sangsig Kim
17 Effect of channel diameter variation on electrical characteristics of single-gated feedback field-effect transistors
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Jinsun Cho, Sola Woo, Hyungu Kang, and Sangsig Kim
16 Effect of Substrate on Mechanical and Electrical Characteristics of Flexible a-IGZO TFTs
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Hyungjin Park, Kyoungah Cho, Hyungon Oh, and Sangsig Kim
15 Thermoelectric properties of mixed ionic-electronic conductor Ag2Se nanoparticle thin films
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Seunggen Yang, Kyoungah Cho, and Sangsig Kim
14 Thermal conductivity measurement of boron nitride thermal adhesive by thermal flow measurement method
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Yoonbeom Park, Kyoungah Cho, and Sangsig Kim
13 Electrical characteristics of gate-all-around tunneling field-effect transistors with varying numbers of nanowire channels
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Sola Woo, Junsun Cho, Hyungu Kang, and Sangsig Kim
12 Electrical characteristics of silicon nanowire biristor devices
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Doohyeok Lim, and Sangsig Kim
11 Electrical characteristics of silicon nanowire feedback field-effect transistors with Pt nanocrystal storage nodes
2018 ѱȸ ϰ мȸ, , ѹα / 2018.08.16 - 2018.08.17
Yoonjoong Kim, and Sangsig Kim
10 Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation
2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Taiwan / 2018.04.16 - 2018.04.19
Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, and Sangsig Kim
9 Steep slope subthreshold characteristics of dual-gate feedback field-effect transistors
E-MRS 2018 Spring Meeting, Strasbourg, France / 2018.06.18 - 2018.06.22
Doohyeok Lim, Yoonjoong Kim, and Sangsig Kim
8 Non-volatile memory characteristics of silicon nanowire feedback field-effect transistors with storage nodes of Pt nanocrystals
E-MRS 2018 Spring Meeting, Strasbourg, France / 2018.06.18 - 2018.06.22
Yoonjoong Kim, and Sangsig Kim
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5 Covered Source-Channel Tunnel Field-Effect Transistors with Trench Gate Structures
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