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158 Effect of the interface reaction on the resistiveswitching properties of Au/ZnOxS1-x/metal memorydevices
NANO KOREA 2013, Seoul, Korea/ 2013.07.10 - 2013.07.12
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156 Energy barrier effect on the hysteresis of graphene field-effect transistors
Fourteenth International Conference on the Science and Applications of Nanotubes(NT13), ipoli Congress Center, Espoo, Finland/ 2013.06.24 - 2013.06.28
Dong Hoon Hwang, In Cheol Nam, Tae Geun Kim, Chan-Wook Baik, Sung Woo Hwang, and Sangsig Kim
155 The study of micro-scale strain on flexible networked single-walled carbon nanotube electronic devices
Fourteenth International Conference on the Science and Applications of Nanotubes(NT13), ipoli Congress Center, Espoo, Finland/ 2013.06.24 - 2013.06.28
Tae Geun Kim, Jong Seung Hwang, Un Jeong Kim, Sung Woo Hwang, and Sangsig Kim
154 Capacitance extraction of graphene field-effect transistors from time-domain pulse responses
Fourteenth International Conference on the Science and Applications of Nanotubes(NT13), ipoli Congress Center, Espoo, Finland/ 2013.06.24 - 2013.06.28
Incheol Nam, Daewon Kim, Taegeun Kim, Keun Heo, Unjeong Kim, Chan-Wook Baik, Sungwoo Hwang, and Sangsig Kim
153 Influence of Intrinsic Regions on the Avalanche Gain of p+-i-n+ Silicon-Nanowires Avalanche Photodetectors
E-MRS 2013 SPRING MEETING, Strasbourg, France/ 2013.05.27 - 2013.05.31
Kyungwhan Yang, Kiyeol Kwak, Sangsig Kim
152 Effects of ZnO Nanoparticle-Layers on Luminescent Characteristics of Organic Light-Emitting Diodes
E-MRS 2013 SPRING MEETING, Strasbourg, France/ 2013.05.27 - 2013.05.31
Kiyeol Kwak, Kyoungah Cho, Sangsig Kim
151 Thermoelectric characteristics of silicon nanowires on plastics
38th International Conference on Micro and Nano Engineering, Toulouse, France/ 2012.09.16 - 2012.09.20
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150 Durability of Electrical Characteristics of Transparent ZnO Film-based TFTs on Plastics under Mechanical Bending
38th International Conference on Micro and Nano Engineering, Toulouse, France/ 2012.09.16 - 2012.09.20
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149 Remarkable Enhancement in Light Emission from Flexible Organic Light-Emitting Diodes by insertion ZnO Nanoparticle-Layers
The 12th International Meeting on Information Display, Daegu, Korea/ 2012.08.28 - 2012.08.31
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148 The effect of trapped charge on silicon nanowire pseudo-MOSFETs
NANO KOREA 2012, Seoul, Korea/ 2012.08.16 - 2012.08.18
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147 Memory Characteristics of ZnO Nanowires-Based Double Stacked Nano-Floating Gate Memory Devices
NANO KOREA 2012, Seoul, Korea/ 2012.08.16 - 2012.08.18
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142 RF ͸ ۵ 迭 ZnO Ʈ Ư
2012⵵ ѱȸ ϰмȸ, Gangneung, Korea/ 2012.06.27 - 2012.06.29
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141 p+-i-n+ Ǹ 뼱 ÷ú ¾
2012⵵ ѱȸ ϰмȸ, Gangneung, Korea/ 2012.06.27 - 2012.06.29
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140 P+-i-n+ Silicon Nanowire ֹġ ׺ Ư
2012⵵ ѱȸ ϰм, Gangneung, Korea/ 2012.06.27 - 2012.06.29
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139 Ion-gel Gate Dielectrics for Arrayed Si Nanowire Field Effect Transistors
19ȸ ѱݵüмȸ, Seoul, Korea/ 2012.02.15 - 2012.02.17
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138 Mn doped ZnOxS1-x ׺ȭ ޸𸮼 Ư ġ
19ȸ ѱݵüмȸ, Seoul, Korea/ 2012.02.15 - 2012.02.17
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137 ̿ ÷ ׺ȭ ޸ Ư
19ȸ ѱݵüмȸ, Seoul, Korea/ 2012.02.15 - 2012.02.17
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136 A Nanomaterial-Based Rectifier Combined with a Si Nanowires-FET on a Plastic Substrate
ICNST 2011 Korea, Sunchon, Korea/ 2011.11.10 - 2011.11.11
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133 Characterization of pn Heterojunction Diodes Constructed with a Cu2O
ICAE 2011, Jeju, Korea / 2011.11.07 - 2011.11.11
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131 Si-Nanowire-Array-Based NOT-Logic Circuits Constructed on Plastic
ICAE 2011, Jeju, Korea / 2011.11.07 - 2011.11.11
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130 Vertically Integrated Logic Circuits Constructed using ZnO-nanowire-based
ICAE 2011, Jeju, Korea / 2011.11.07 - 2011.11.11
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