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296 źҹڸ ߿ Ư
ȸ, 22, 1ȣ, pp. 213-215 (2018.03)
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295 Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation
Current Applied Physics, Vol. 18, pp. 340 - 344 (2018.03)
Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, and Sangsig Kim
294 Electrical characteristics of silicon nanowire CMOS inverters under illumination
Optics Express, Vol. 26, pp. 3527 - 3534 (2018.02)
Jeuk Yoo, Yoonjoong Kim, Doohyeok Lim, and Sangsig Kim
293 Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor
IEEE Electron Device Letters, Vol. 39, pp. 47 - 50 (2018.01)
Sojeong Lee, Won-Yong Lee, Bongho Jang, Taegyun Kim, Jin-Hyuk Bae, Kyoungah Cho, Sangsig Kim, and Jaewon Jang
292 Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters
Superlattices and Microstructures, Vol. 113, pp. 169 - 177 (2018.01)
Jae Hyun Park, Tae-sig Chang, Minsuk Kim, Sola Woo, Sangsig Kim
291 Thermoelectric characteristics of glass fibers coated with ZnO and Al-doped ZnO
Materials Research Bulletin, Vol. 96, pp. 246-249 (2017.12)
Yoonbeom Park, Kyoungah Cho, and Sangsig Kim
290 Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors
Scientific Reports, 7, 15392 (2017.11)
Jun Young Choi, Keun Heo, Kyung-Sang Cho, Sung Woo Hwang, JaeGwan Chung, Sangsig Kim, Byeong Hyeon Lee, and Sang Yeol Lee
289 Large voltage generation of flexible thermoelectric nanocrystal thin films by finger contact
Advanced Energy Materials, Vol. 7, 1700972 (2017.11)
Jinyong Choi, Kyoungah Cho, Junggwon Yun, Yoonbeom Park, Seunggen Yang, and Sangsig Kim
288 Impact ionization and tunneling operations in charge-plasma dopingless device
Superlattices and Microstructures, Vol. 111, pp. 796 - 805 (2017.11)
Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyeungmin Im, Jinsun Cho, Hyungu Kang, and Sangsig Kim
287 Thermoelectric characteristics of -Ag2Te nanoparticle thin films on flexible substrates
Thin Solid Films, Vol. 641, pp. 65-68 (2017.11)
Seunggen Yang, Kyoungah Cho, Junggwon Yun, Jinyong Choi, Sangsig Kim
286 Mechanical strain-induced defect states in amorphous silicon channel layers of thin-film transistors
Thin Solid Films, Vol. 641, pp. 43-46 (2017.11)
Minsuk Kim, Hyungon Oh, Sukhyung Park, Kyoungah Cho, Sangsig Kim
285 Gate Overlap 뼱 CMOS Inverter Ư
ȸ, 66, 10ȣ, pp. 1494-1498 (2017.10)
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ȸ, 21, 3ȣ, pp.284-287 (2017.09)
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283 Memory characteristics of silicon nanowire transistors generated by weak impact ionization
Scientific Reports, 7, 12436 (2017.09)
Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim
282 Ʈ a-IGZO ڸƮ Ư ġ
ȸ, 21, 2ȣ, pp.170 ~ 173 (2017.06)
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281 Flexible thermoelectric generators composed of n-and p-type silicon nanowires fabricated by top-down method
Advanced Energy Materials, 7, 1602138 (2017.04)
Jinyong Choi, Kyoungah Cho, and Sangsig Kim
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ȸ , Vol. 21, No. 1, pp. 96-99 (2017.03)
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279 Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses
Semiconductor Science and Technology, Vol. 32, No. 4, 45002 (2017.03)
Hyungon Oh, Kyoungah Cho, Sangsig Kim
278 Thermoelectric Characteristics of Nanocomposites Made of HgSe and Ag Nanoparticles for Flexible Thermoelectric Devices
Nano Research, Vol. 10, 2, pp 683-689 (2017.02)
Junggwon Yun, Kyoungah Cho, Yoonbeom Park, Seunggen Yang, Jinyong Choi, and Sangsig Kim
277 Electrical characteristics of a bendable a-Si:H thin film transistor with overlapped gate and source/drain regions
Applied Physics Letters, 110, 093502 (2017.02)
Hyungon Oh, Kyoungah Cho,and Sangsig Kim
276 Steep switching characteristics of single-gated feedback field-effect transistors
Nanotechnology, Vol. 28, No. 5, 055205 (2017.02)
Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho, and Sangsig Kim
275 Bendable solid-state supercapacitors with Au nanoparticle-embedded graphene hydrogel films
Scientific Reports, 7, 40163 (2017.01)
Kyungwhan Yang, Kyoungah Cho, Dae Sung Yoon, Sangsig Kim
274 Fatigue Behaviors of Silicon Nanowire Field-Effect Transistors on Bendable Substrate
Journal of Nanoscience and Nanotechnology, Vol. 16, pp. 12823-12826 (2016.12)
Yoonjoong Kim, Youngin Jeon, Doohyeok Lim, and Sangsig Kim
273 Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates
Nano Research, Vol. 9, Issue 12, pp. 3656–3662 (2016.12)
Junggwon Yun, Myeongwon Lee, Youngin Jeon, Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, and Sangsig Kim
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ȸ, 20, 4ȣ, pp.412~415 (2016.12)
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271 Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 oC
Semiconductor Science and Technology, Vol. 31. 12 (2016.11)
Jun Young Choi, Sangsig Kim, Byeong-Ung Hwang, Nae-Eung Lee, Sang Yeol Lee
270 Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration
Scientific Reports, published online (2016.11)
Jun Young Choi, Keun Heo, Kyung-Sang Cho, Sung Woo Hwang, Sangsig Kim, and Sang Yeol Lee
269 Electrical Characteristics of SnO2 Thin-Film Transistors Fabricated on Bendable Substrates Using Reactive Magnetron Sputtering
Journal of Nanoscience and Nanotechnology, Vol. 16, pp. 11697-11700 (2016.11)
Doohyeok Lim, Youngin Jeon, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim
268 Field-Effect Modulation of the Thermoelectric Characteristics of Silicon Nanowires on Plastic Substrates
Nanotechnology, Vol. 27, No. 48, 485401 (7pp) (2016.10)
Jinyong Choi, Youngin Jeon, Kyoungah Cho, Sangsig Kim
267 Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates
Applied Physics Letters, Vol. 109, pp. 143504 (2016.10)
Sukhyung Park, Kyoungah Cho, Hyungon Oh, and Sangsig Kim
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