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326 Energy devices generating and storing electricity from finger and solar thermal energy
Nano Energy, Vol. 69, 104458 (2020.03)
Seunggen Yang, Kyoungah Cho, and Sangsig Kim
325 Performance of hybrid energy devices consisting of photovoltaic cells and thermoelectric generators
ACS Applied Materials & Interfaces, Vol.12, pp.8124-8129 (2020.01)
Yoonbeom Park, Kyoungah Cho, Seunggen Yang, Taeho Park, Sungeun Park, Hee-eun Song, Soo Min Kim, and Sangsig Kim
324 Electrical characteristics of amorphous indium-tin-gallium-zinc-oxide TFTs under positive gate bias stress
Electronics Letters, Vol.56, Issue 2, pp.102-104 (2020.01)
Donghyun Kim, Kyoungah Cho, Sola woo, and Sangsig Kim
323 Transposable 3T-SRAM synaptic array using independent double-gate feedback field-effect transistors
IEEE Transactions on Electron Devices, Vol.66, Issue.11, pp.4753 - 4758 (2019.11)
Sola Woo, Jinsun Cho, Doohyeok Lim, Kyoungah Cho and Sangsig Kim
322 Optically tunable feedback operation of silicon nanowire transistors
Semiconductor Science and Technology, Vol.34, No.11, 115014 (2019.10)
Doohyeok Lim, and Sangsig Kim
321 Polarity control of carrier injection for nanowire feedback field-effect transistors
Nano Research, Vol.12, pp.2509–2514 (2019.10)
Doohyeok Lim, and Sangsig Kim
320 Nonvolatile and volatile memory characteristics of a silicon nanowire feedback field-effect transistor with a nitride charge-storage layer
IEEE Transactions on Electron Devices, Vol.66, pp. 3342-3348 (2019.8)
Hyungu Kang, Jinsun Cho, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho and Sangsig Kim
319 Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor
Scientific Reports, 9,886 (2019.1)
Byeong Hyeon Lee, Ahrum Sohn, Sangsig Kim, and Sang Yeol Lee
318 Investigation on dependency mechanism of inverter voltage gain on current level of photo stressed depletion mode thin-film transistors
Solid-State Electronics, Vol.156, pp. 5-11 (2019.6)
Byeong Hyeon Lee, Sangsig Kim, and Sang Yeol Lee
317 Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors
Solid-State Electronics, Vol.158, pp.59-63 (2019.8)
Byeong Hyeon Lee, Doo Yong Lee, Ji Ye Lee, Sung kyun Park, Sangsig Kim, and Sang Yeol Lee
316 Dependency of Si Content on the Performance of Amorphous SiZnSnO Thin Film Transistor Based Logic Circuits for Next-Generation Integrated Circuits
Transactions on Electrical and Electronic Materials, Vol. 20, Issue 3, pp 175–180 (2019.6)
Byeong Hyeon Lee, Sangsig Kim, and Sang Yeol Lee
315 A Laterally Designed All-in-one Energy Device Using a Thermoelectric Generator-coupled Micro Supercapacitor
Nano Energy, Vol. 60, pp.667-672 (2019.06)
Kyungwhan Yang, Kyoungah Cho, Seunggen Yang, Yoonbeum Park, Sangsig Kim
314 Static random-access memory characteristics of single-gated feedback field-effect transistors
IEEE Transactions on Electron Devices, Vol. 66, pp. 413-419 (2019.01)
Jinsun Cho, Doohyeok Lim, Sola Woo, Kyungah Cho, and Sangsig Kim
313 Covered source–channel tunnel field-effect transistors with trench gate structures
IEEE Transactions on Nanotechnology, Vol. 18. pp.114-118(2018.11)
Sola Woo and Sangsig Kim
312 Lithography-free fabrication of field effect transistor channels with randomly contact-printed black phosphorus flakes
Materials Science in Semiconductor Processing, Vol.86, pp.58-62 (2018.11)
Seolhee Yoo, Sangsig Kim, and Yong-Won Song
311 Effect of physical densification on sub-gap density of states in amorphous InGaZnO thin films
Superlattices and Microstructures, Vol. 121, pp. 33-37 (2018.09)
Hyungon Oh, Kyoungah Cho, and Sangsig Kim
310 Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect-transistor under bending stresses
Semiconductor Science and Technology, Vol. 33, No. 10, 105009 (2018.09)
Yoonjoong Kim, and Sangsig Kim
309 Switchable-memory operation of silicon nanowire transistor
Advanced Electronic Materials, 1800429 (2018.09)
Yoonjoong Kim, Jinsun Cho, Doohyeok Lim, Sola Woo, Kyoungah Cho, and Sangsig Kim
308 Effect of carbon black addition on thermal stability and capacitive performances of supercapacitors
Scientific Reports, 8, 11989 (2018.08)
Kyungwhan Yang, Kyoungah Cho, and Sangsig Kim
307 Feedback and tunneling operations of a p+-i-n+ silicon nanowire field-effect transistor
Nanotechnology, Vol. 29, No. 43, 435202 (2018.08)
Yoonjoong Kim, Doohyeok Lim, Jinsun Cho and Sangsig Kim
304 Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors
Superlattices and Microstructures, Vol.120, pp.60-66 (2018.08)
Sola Woo, Minsuk Kim, Hyungon Oh, Kyoungah Cho, and SangsigKim
303 Bendable thermoelectric generators composed of p- and n-type silver chalcogenide nanoparticle thin films
Nano Energy, Vol. 49, pp. 333-337 (2018.07)
Seunggen Yang, Kyoungah Cho, Yoonbeom Park, and Sangsig Kim
302 Electrochemical characteristics of flexible micro supercapacitors with reduced graphene oxide-carbon nanotubes composite electrodes
Superlattices and Microstructures, Vol. 118, pp. 145-151 (2018.06)
Kyungwhan Yang, Kyoungah Cho, and Sangsig Kim
301 Silicon nanowire CMOS NOR logic gates featuring one-volt operation on bendable substrates
Nano Research, Vol.11, pp.2625–2631 (2018.05)
Jeongje Moon, Yoonjoong Kim, Doohyeok Lim, and Sangsig Kim
300 Silicon nanowire ratioed inverters on bendable substrates
Nano Research, Vol.11, pp.2586-2591 (2018.05)
Jeongje Moon, Yoonjoong Kim, Doohyeok Lim, Kyeungmin Im, and Sangsig Kim
299 Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs
Superlattices and Microstructures, Vol. 117, pp. 169-172 (2018.05)
Hyungjin Park, Kyoungah Cho, Hyungon Oh, and Sangsig Kim
298 A SPICE model of silicon tunneling field-effect transistors
Microelectronic Engineering, Vol. 191, pp. 66 - 71 (2018.05)
Sola Woo, Minsuk Kim, and Sangsig Kim
297 Nondestructive readout memory characteristics of silicon nanowire biristors
IEEE Transactions on Electron Devices, Vol. 65, pp. 1578 - 1582 (2018.04)
Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Jinsun Cho, and Sangsig Kim
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