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349 ǵ ȿ Ʈ Ƿ Ư
31ȸ ݵüмȸ, ѹα / 2024.01.24 - 2024.01.26
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348 Effect of Injected Carrier Type on Switching Characteristics of Triple-gated Feedback Field-effect Transistors
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Hyojoo Heo, Yunwoo Shin, Juhee Jeon, Kyoungah Cho, Sangsig Kim
347 Reconfigurable Memory Operation of Triple-gated Feedback Field-effect Transistors
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Jeongyun Oh, Juhee Jeon, Kyoungah Cho, Sangsig Kim
346 Effect of dual gating on mobility and stability of amorphous indium-tin-gallium-zinc oxide thin film transistors
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Minhyeok Seol, Kyoungah Cho, Mingu Kang, Sangsub Kim, Sangsig Kim
345 Reconfigurable Logic Gates Using Triple-Gated Feedback Field-Effect Transistors
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Jongseong Han, Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim
344 Memory characteristics of capacitorless 2T DRAM cell composed of amorphous indium-tin-gallium-zinc oxide TFTs
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Seungho Ryu, Kyoungah Cho, Sangsig Kim
343 Electrical characteristics of amorphous indium-tin-gallium-zinc oxide thin-film transistors with bilayer channels
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Mingu Kang, Kyoungah Cho, Sangsub Kim, Sangsig Kim
342 Reconfigurable Characteristics of p+-n-i-p-n+ Silicon Nanowire Field-effect Transistors with Single-gated Structure
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Yunwoo Shin, Kyoungah Cho, Sangsig Kim
341 Junction Doping Gradient Induced Variability in Gate-all-around Feedback Field-effect Transistor
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Juhee Jeon, Kyoungah Cho, Sangsig Kim
340 Capacitorless 1T-DRAM comprising poly-silicon feedback field-effect transistor
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Taeho Park, Kyoungah Cho, Sangsig Kim
339 Control of current hysteresis of near-zero subthreshold swing feedback field-effect transistors
The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Jaemin Son, Kyoungah Cho, Sangsig Kim
338 ǿ ٰ Ǹ ä ǵ ȿ Ʈ Ư ȭ
2023 ѱȸ ϰмȸ, , ѹα/ 2023.08.16 - 2023.08.18
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337 1T-DRAM  disturbance Ư
2023 ѱȸ ϰмȸ, , ѹα/ 2023.08.16 - 2023.08.18
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336 Interface trap charge ٰ Ǹ FBFET Ưȭ
2023 ѱȸ ϰмȸ, , ѹα/ 2023.08.16 - 2023.08.18
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335 Ǹ p+-n-p-n+ ̿ Ư
2023 ѱȸ ϰмȸ, , ѹα/ 2023.08.16 - 2023.08.18
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334 SiO2 Ʈ a-ITGZO ڸƮ Ư м
2023 ѱȸ ϰмȸ, , ѹα/ 2023.08.16 - 2023.08.18
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333 Ʈ ǵ ȿ Ʈ ޸ Ư
30ȸ ݵüмȸ, ѹα / 2023.02.13 - 2023.02.15
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332 ǵ ȿ Ʈ ̾ Ʈ ŷڼ
30ȸ ݵüмȸ, ѹα / 2023.02.13 - 2023.02.15
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331 ǵ ȿ Ʈ exclusive NOR Ư
30ȸ ݵüмȸ, ѹα / 2023.02.13 - 2023.02.15
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330 ǵ ȿ Ʈ 3 ι Ư
30ȸ ݵüмȸ, ѹα / 2023.02.13 - 2023.02.15
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329 ٰ Ǹ ä ǵ ȿ Ʈ Ī Ư
30ȸ ݵüмȸ, ѹα / 2023.02.13 - 2023.02.15
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328 ް Ʈ Ǹ 뼱 ǵ ȿ Ʈ Ư
30ȸ ݵüмȸ, ѹα / 2023.02.13 - 2023.02.15
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327 Top gate a-ITGZO ڸƮͿ Al2O3 buffer layer channel passivation ȿ
30ȸ ݵüмȸ, ѹα / 2023.02.13 - 2023.02.15
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326 ǵ ȿ Ʈͷ ι Ư
2022 ѱȸ ϰмȸ, , ѹα/ 2022.08.11 - 2022.08.13
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325 ä Ǹ 뼱 feedback field-effect tranasistor Ư
2022 ѱȸ ϰмȸ, , ѹα/ 2022.08.11 - 2022.08.13
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324 µ n-ä ǵ ȿ Ʈ Ư
2022 ѱȸ ϰмȸ, , ѹα/ 2022.08.11 - 2022.08.13
ȯ, ,
323 Ʈ Ʈ ǵ ȿ Ʈ Ư
2022 ѱȸ ϰмȸ, , ѹα/ 2022.08.11 - 2022.08.13
ſ, , ,
322 ä ̿ Ʈ ǵ ȿ Ʈ Ư
2022 ѱȸ ϰмȸ, , ѹα/ 2022.08.11 - 2022.08.13
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321 ũ⿡ ٰ Ǹ ä ǵ ȿ Ʈ memory Ư ȭ
2022 ѱȸ ϰмȸ, , ѹα/ 2022.08.11 - 2022.08.13
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320 Aging ȿ a-ITGZO ڸƮ Ư
2022 ѱȸ ϰмȸ, , ѹα/ 2022.08.11 - 2022.08.13
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12 3 4 5 6 7 8 9 10