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2025
6 3-bit memory operation of capacitor-less one-transistor one-diode DRAM cell
SCIENCE CHINA Information Sciences
Seungho Ryu, Kyungah Cho and Sangsig Kim
5 Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes
SCIENCE CHINA Information Sciences, Vol. 68, Issue 6, 162401 (2025)
Juhee Jeon, Yunwoo Shin, Hyojoo Heo, Jaemin Son, Seungho Ryu, Kyoungah Cho and Sangsig Kim
4 Binary and ternary compatible NAND/NOR logic-in-memory cell constructed with single-gated feedback field-effect transistors
Materials Science in Semiconductor Processing, Vol. 190, 109357 (2025.05)
Donghyung Lee, Yunwoo Shin, Jaemin Son, Kyoungah Cho and Sangsig Kim
3 Stateful Full Adder Using Silicon Diodes
Advanced Intelligent Systems, 2400735
Jaemin Son, Juhee Jeon, Kyoungah Cho and Sangsig Kim
2 Edge Detection and Graph Coloring by Network of Oscillatory Neuromorphic Devices Comprising Silicon Nanosheet-Gated Diodes
Nano Research, Vol 18, Issue 3, 94907214 (2025.03)
Yunwoo Shin, Hyojoo Heo, Kyoungah Cho and Sangsig Kim
1 Logic-in-memory Cell Enabling Binary and Ternary Boolean Logics
SCIENCE CHINA Information Sciences, Vol. 68, Issue 2, 122407 (2025.02)
Jeongyun Oh, Juhee Jeon, Yunwoo Shin, Kyoungah Cho and Sangsig Kim