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2024
12 Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings
Heliyon, Vol 10, Issue 13, E34134 (2024.07)
Mingu Kang, Kyoungah Cho, Minhyeok Seol, Sangsub Kim and Sangsig Kim
11 Delay characteristics of quasi-nonvolatile memory devices operating in positive feedback mechanism
Nanotechnology, Vol. 35, No. 41 (2024.07)
Jeongyun Oh, Juhee Jeon, Yunwoo Shin, Kyoungah Cho and Sangsig Kim
10 Binarized neural network comprising quasi-nonvolatile memory devices for neuromorphic computing
Advanced Electronic Materials, Vol. 10, Issue. 9 (2024.09)
Yunwoo Shin, Juhee Jeon, Kyoungah Cho and Sangsig Kim
9 Capacitorless Two-Transistor Dynamic Random-Access Memory Cells Comprising Amorphous Indium-Tin-Gallium-Zinc Oxide Thin-Film Transistors for the Multiply-Accumulate Operation
Advanced Materials Technologies, Vol. 9, Issue. 15 (2024.08)
Seungho Ryu, Mingu Kang, Kyoungah Cho and Sangsig Kim
8 Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels
Nanotechnology, Vol. 35, No. 27 (2024.04)
Hyojoo Heo, Yunwoo Shin, Jaemin Son, Seungho Ryu, Kyoungah Cho and Sangsig Kim
7 Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors
Nanomaterials, Vol. 14, No. 7, 562 (2024.03)
Jaemin Son, Juhee Jeon, Kyoungah Cho and Sangsig Kim
6 Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure
Scientific Reports, 14, 6446 (2024.03)
Jongseong Han, Jaemin Son, Seungho Ryu, Kyoungah Cho and Sangsig Kim
5 Binarized neural network of diode array with high concordance to vector-matrix multiplication
Scientific Reports, 14, 5891 (2024.03)
Yunwoo Shin, Kyoungah Cho and Sangsig Kim
4 Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors
Nanomaterials, Vol. 14, No. 6, 493 (2024.03)
Taeho Park, Kyoungah Cho and Sangsig Kim
3 Bidirectional Synaptic Operations of Triple-Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics
Advanced Electronic Materials, 2300764 (2024.06)
Yunwoo Shin, Jaemin Son, Juhee Jeon, Seungho Ryu, Kyoungah Cho and Sangsig Kim
2 Stateful Logic Operation of Gated Silicon Diodes for In-Memory Computing
Advanced Electronic Materials, 2300815 (2024.07)
Jaemin Son, Juhee Jeon, Kyoungah Cho and Sangsig Kim
1 Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States
Nanomaterials, Vol. 14, No. 2, 210 (2024.01)
Juhee Jeon, Kyoungah Cho and Sangsig Kim