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2018
22 Covered source–channel tunnel field-effect transistors with trench gate structures
IEEE Transactions on Nanotechnology, Vol. 18. pp.114-118(2018.11)
Sola Woo and Sangsig Kim
21 Lithography-free fabrication of field effect transistor channels with randomly contact-printed black phosphorus flakes
Materials Science in Semiconductor Processing, Vol.86, pp.58-62 (2018.11)
Seolhee Yoo, Sangsig Kim, and Yong-Won Song
20 Effect of physical densification on sub-gap density of states in amorphous InGaZnO thin films
Superlattices and Microstructures, Vol. 121, pp. 33-37 (2018.09)
Hyungon Oh, Kyoungah Cho, and Sangsig Kim
19 Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect-transistor under bending stresses
Semiconductor Science and Technology, Vol. 33, No. 10, 105009 (2018.09)
Yoonjoong Kim, and Sangsig Kim
18 Switchable-memory operation of silicon nanowire transistor
Advanced Electronic Materials, 1800429 (2018.09)
Yoonjoong Kim, Jinsun Cho, Doohyeok Lim, Sola Woo, Kyoungah Cho, and Sangsig Kim
17 Effect of carbon black addition on thermal stability and capacitive performances of supercapacitors
Scientific Reports, 8, 11989 (2018.08)
Kyungwhan Yang, Kyoungah Cho, and Sangsig Kim
16 Feedback and tunneling operations of a p+-i-n+ silicon nanowire field-effect transistor
Nanotechnology, Vol. 29, No. 43, 435202 (2018.08)
Yoonjoong Kim, Doohyeok Lim, Jinsun Cho and Sangsig Kim
15 The hysteresis characteristic of Feedback field-effect transistors with fluctuation of gate oxide and metal gate
전기전자학회논문지
Kyungsoo Lee, Sola Woo, Jinsum Cho, Hyungu Kang, and Sangsig Kim
14 A review of feedback field-effect transistors : operation mechanism and their applications
전기전자학회논문지
Minsuk Kim, Kyungsoo Lee, and Sangsig Kim
13 Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors
Superlattices and Microstructures, Vol.120, pp.60-66 (2018.08)
Sola Woo, Minsuk Kim, Hyungon Oh, Kyoungah Cho, and SangsigKim
12 Bendable thermoelectric generators composed of p- and n-type silver chalcogenide nanoparticle thin films
Nano Energy, Vol. 49, pp. 333-337 (2018.07)
Seunggen Yang, Kyoungah Cho, Yoonbeom Park, and Sangsig Kim
11 Electrochemical characteristics of flexible micro supercapacitors with reduced graphene oxide-carbon nanotubes composite electrodes
Superlattices and Microstructures, Vol. 118, pp. 145-151 (2018.06)
Kyungwhan Yang, Kyoungah Cho, and Sangsig Kim
10 Silicon nanowire CMOS NOR logic gates featuring one-volt operation on bendable substrates
Nano Research, Vol.11, pp.2625–2631 (2018.05)
Jeongje Moon, Yoonjoong Kim, Doohyeok Lim, and Sangsig Kim
9 Silicon nanowire ratioed inverters on bendable substrates
Nano Research, Vol.11, pp.2586-2591 (2018.05)
Jeongje Moon, Yoonjoong Kim, Doohyeok Lim, Kyeungmin Im, and Sangsig Kim
8 Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs
Superlattices and Microstructures, Vol. 117, pp. 169-172 (2018.05)
Hyungjin Park, Kyoungah Cho, Hyungon Oh, and Sangsig Kim
7 A SPICE model of silicon tunneling field-effect transistors
Microelectronic Engineering, Vol. 191, pp. 66 - 71 (2018.05)
Sola Woo, Minsuk Kim, and Sangsig Kim
6 Nondestructive readout memory characteristics of silicon nanowire biristors
IEEE Transactions on Electron Devices, Vol. 65, pp. 1578 - 1582 (2018.04)
Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Jinsun Cho, and Sangsig Kim
5 비정질 탄소박막의 광발열 특성연구
전기전자학회지, 22권, 1호, pp. 213-215 (2018.03)
오현곤, 조경아, 김상식
4 Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation
Current Applied Physics, Vol. 18, pp. 340 - 344 (2018.03)
Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, and Sangsig Kim
3 Electrical characteristics of silicon nanowire CMOS inverters under illumination
Optics Express, Vol. 26, pp. 3527 - 3534 (2018.02)
Jeuk Yoo, Yoonjoong Kim, Doohyeok Lim, and Sangsig Kim
2 Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor
IEEE Electron Device Letters, Vol. 39, pp. 47 - 50 (2018.01)
Sojeong Lee, Won-Yong Lee, Bongho Jang, Taegyun Kim, Jin-Hyuk Bae, Kyoungah Cho, Sangsig Kim, and Jaewon Jang
1 Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters
Superlattices and Microstructures, Vol. 113, pp. 169 - 177 (2018.01)
Jae Hyun Park, Tae-sig Chang, Minsuk Kim, Sola Woo, Sangsig Kim