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   1992 - 1998
1999
3 Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
MRS Internet J. Nitride Semicond. Res. 4S1, G11.4 (1999)
S. Kim, X.Li, J.J.Coleman, R.Zhang, D.M.Hansen, T.F.Kuech, S.G.Bishop
2 Growth Kinetics of GaN and Effects of Flux Ratio on the Properties of GaN Films Grown by Plasma-assisted Molecular Beam Epitax
Journal of Vacuum Science & Technology A Vol.17, No.5 pp3019-3028(1999.09/10)
J.M. Myoung, O. Gluschenkov, K. Kim, and S. Kim
1 Annealing Studies of Photoluminescence Spectra from Multiple Er3+ Centers in Er-implanted GaN
Journal of Electronic Materials Vol.28, No.3, pp266-274 (1999)
S. Kim, S.J. Rhee, X. Li, J.J. Coleman and S.G. Bishop