고려대 나노트로닉스연구실

19	Photoluminescence Excitation Spectroscopy of Free-to-bound Transition in Undoped GaN Grown by HydrideVapor Phase Epitaxy

Applied Physics Letters Vol.73, No.18, pp2636-2638 (1998.11)

S.J. Rhee, S. Kim, E.E. Reuter, R.J. Molnar, and S.G. Bishop

18	Site-selective Photoluminescence Spectroscopy of Er-implanted Wrutzite GaN

Materials Research Society Symposium Proceedings 468, 131 (1998)

S. Kim, S.J. Rhee, D.A. turnbull, X. Li, J.J. Coleman, S.G. Bishop

17	Interdiffusion in InGaAs/InP Ultra-thin Quantum Wells after SiO2 Capping and Rapid Thermal Annealing

Materials Research Society Symposium Proceedings (1998)

K. Sengupta, H.C. Kuo, S. Kim, L.J. Chou, A. Ping, M. Lgarashi, K.C. Hseih, S.L. Chuang, I. Adesida, S.G. Bishop, Y.C. Chang, M. Feng, G.E. Stillman, J.K. Liu, S.V. Bandara, S.D. Gunapala, L. Li, H.C. Liu

16	Redshifting and Broadening of Quantum-well Infrared Photodetector's Response via Impurity-free Vacancy Disordering

IEEE Journal of Selected Topic in Quantum Electronics Vol.4, No.4 pp746-756 (1998)

Deepak Segupta, Vikram Jandhyala, Sangsig Kim, Weich Fang, Jay Malin, Peter Apostolakis, Kwong-Chi Hseih, Yia-Chung Chang, Shun Lien Chuang, Sumith Bandara, Sarath Gunapala, Milton Feng, Eric Michielssen, and Greg Stillman

15	Photoluminescence and Photoluminescence Excitation Spectroscopy of Multiple Nd3+ Site in Nd-implanted Wuetzite GaN

Physical Review B Vol.57, No.23, pp14588-14591(1998.06)

S. Kim, S.J. Rhee, X. Li, J.J. Coleman, and S.G. Bishop

14	The incorporation of Arsenic in GaN by Metalorganic Chemical Vapor Deposition

Applied Physics Letters Vol.72, No.16, pp1990-1992 (1998)

X. Li, S. Kim, E.E. Reuter, S.G. Bishop, and J.J. Coleman

13	Excitation Mechanisms of Multiple (Er3+) Site in Er-implanted GaN

Journal of Electronic Materials Vol.27, No.4, pp246-254 (1998)

S. Kim, S.J. Rhee, X. Li, J.J. Coleman, S.G. Bishop, P.B. Klein

12	Monolithically Integrated Dual-band Quantum Well Infrared Photodetector

Materials Research Society Symposium Proceeding 484, 205-214 (1997)

SENGUPTA, D. K., S. D. GUNAPALA, S. V. BANDARA, F. POOL, J. K. LIU, M. McKELVEY, E. LUONG, J. TOREZAN, J. MUMULO, W. HONG, J. GILL, G. E. STILLMAN, A. P. CURTIS, S. Kim, L. J. CHOU, P. J. MARES, M. FENG, K. C. HSIEH, S. L. CHUANG, S. G. BISHOP, Y. C. CHAN

11	Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth 182, pp241-246 (1997)

J.M. Myoung, K.H. Shim, O. Gluschenkov, C. Kim, K. Kim, S. Kim, S.G. Bishop

10	Isoelectronic bound-exciton photoluminescence in strained beryllium-doped Si0.92Ge0.08 epilayers and Si0.92Ge0.08 /Si superlattices at ambient and elevated hydrostatic pressure

Physical Review B Vol.55, pp7130-7140 (1997)

Sangsig Kim, Ganlin Chang, Irving P. Herman, Joze Bevk, Karen L. Moore and Dennis G. Hall

9	Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy

Applied Physics Letters Vol.71, pp231-233 (1997)

S. Kim, S. J. Rhee, D. A. Turnbull, E. E. Reuter, X. Li, J. J. Coleman, and S. G. Bishop

8	Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN

Applied Physics Letters Vol.71, No.18 , pp2662-2664 (1997)

S. Kim, S.J. Rhee, D.A. Turnbull, X.Li, J.J. Coleman, P.B. Klein, S.G. Bishop

7	Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy

Applied Physics Letters Vol.69, No.18 , pp2722-2724 (1996)

J. M. Myoung, K. H. Shim, C. Kim, O. Gluschenkov, K. Kim, S. Kim, D. A. Turnbull, and S. G. Bishop

6	Pattern transfer and photoluminescence damage assessment of deep-submicrometer features etched by photon-induced cryoetching

Applied Physics A-Materials Science & Processing Vol.63, pp143-151 (1996)

M.B. Freiler, M.C. Shih, S. Kim, M. Levy, I.P. Herman, R. Scarmozzino, R.M. Osgood, Jr.

5	Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon

Physical Review B Vol.53, No.8 , pp4434-4442 (1996)

Sangsig Kim, Irving P. Herman, Karen L. Moore, Dennis G. Hall, and Joze Bevk

4	Photoluminescence from wurtzite GaN under hydrostatic pressure

Applied Physics Letters Vol.67, No.3 , pp380-382 (1995)

Sangsig Kim, Irving P. Herman, J. A. Tuchman, K. Doverspike, L. B. Rowland, and D. K. Gaskill

3	Luminescence properties of submicron features fabricated by using magnetron reactive ion etching with different sample biases

Applied Physics Letters Vol.67, pp3833-3835 (1995)

M. Freiler, G.F. McLane, S. Kim, M. Levy, R. Scarmozzino, I.P. Herman, R.M. Osgood, Jr.

2	Photoluminescence of ZnSe/ZnMnSe superlattices under hydrostatic pressure

Journal of Applied Physics Vol.73, No.11 , pp7730-7738 (1993

Judah A. Tuchman, Zhifeng Sui, Sangsig Kim and Irving P. Herman

1	Exciton photoluminescence in strained and unstrained ZnSe under hydrostatic pressure

Physical Review B Vol.46, No.20 , pp13371-13378 (1992)

Judah A. Tuchman, Sangsig Kim, Zhifeng Sui, and Irving P. Herman

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