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| 36 | Memory Characteristics of MOS Capacitors Embedded with Ge Nanocrystals in HfO2 Layers by Ion Implantation |
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2006년도 전기전자재료학회 추계학술대회 / 한국전기전자재료학회, 전주 대한민국 / 2006.11.09 - 2006.11.11
Hye-Ryoung Lee, Samjong Choi, Kyoungah Cho, and Sangsig Kim
