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| 28 | Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in HfO2 gate material |
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IEEE Nanotechnology Materials and Devices Conference 2006 / IEEE Nanotechnology Council, 경주 대한민국 / 2006.10.22 - 2006.10.25
Hye-Ryoung Lee, Samjong Choi, Kyoungah Cho, and Sangsig Kim
