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| 27 | Comparison of electrical characteristics of back-and top-gate Si nanowire field-effect transistors |
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IEEE Nanotechnology Materials and Devices Conference 2006 / IEEE Nanotechnology Council, 경주 대한민국 / 2006.10.22 - 2006.10.25
Changjoon Yoon, Kihyun Keem, Jeongmin Kang, Dong-Young Jeong, Moon-Sook Lee, In-Seok Yeo, U-In Chung, Joo-Tae Moon and Sangsig Kim
