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| 344 | Memory characteristics of capacitorless 2T DRAM cell composed of amorphous indium-tin-gallium-zinc oxide TFTs |
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The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Seungho Ryu, Kyoungah Cho, Sangsig Kim
