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| 343 | Electrical characteristics of amorphous indium-tin-gallium-zinc oxide thin-film transistors with bilayer channels |
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The 7th International Conference on Advanced Electromaterials, Jeju, Korea / 2023.10.31 - 2023.11.03
Mingu Kang, Kyoungah Cho, Sangsub Kim, Sangsig Kim
