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| 279 | Electrical characteristics of amorphous indium-tin-gallium-zinc oxide thin film transistors with ZrO2 gate dielectrics |
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The 5th International Conference on Advanced Electromaterials, Jeju, Korea / 2019.11.05 - 2019.11.08
Hosang Lee, Kyoungah Cho, Donghyun Kim and Sangsig Kim
