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| 255 | Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation |
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2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Taiwan / 2018.04.16 - 2018.04.19
Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, and Sangsig Kim
