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Welcome to KOREA nanotronics
| 219 | BJT mode operation in silicon nanowire transistors on bendable substrates for future capacitor-less transistor DRAM |
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NANO KOREA 2016, Gyeonggi-do, Korea / 2016.07.13 - 2016.07.15
Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim
