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| 174 | Direct Determination of Parasitic Gate Capacitance with Compensated Displacement Current in Silicon Nanowire FETs |
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2013 International Symposium on Advanced Nanodevices and Nanotechnology, Hawaii, USA / 2013.12. 08- 2013.12. 13
남인철, 김대원, 백찬욱, 김동명,황성우, 김상식
