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| 361 | Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics |
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Materials Science in Semiconductor Processing, Vol. 143, 106527 (2022.01)
Heesung Kong, Kyoungah Cho, Hosang Lee, Seungjun Lee, Junhyung Lim and Sangsig Kim
