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| 354 | Effect of Ge mole fraction on performance of underlapped gate-all-around SiGe-source TFETs |
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Journal of Nanoscience and Nanotechnology, Vol. 21, No. 8, pp. 4310-4314(5) (2021.08)
Juhee Jeon, Young-soo Park, Sola Woo, Doohyeok Lim, Jaemin Son, and Sangsig Kim
