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| 328 | Nonvolatile and volatile memory characteristics of a silicon nanowire feedback field-effect transistor with a nitride charge-storage layer |
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IEEE Transactions on Electron Devices, Vol.66, pp. 3342-3348 (2019.8)
Hyungu Kang, Jinsun Cho, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho and Sangsig Kim
