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| 253 | Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics |
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Journal of Nanoscience and Nanotechnology, Vol. 15, pp. 7569-7572 (2015.10)
Sukhyung Park, Kyoungah Cho, Jungwoo Jung, Sangsig Kim
