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Welcome to KOREA nanotronics
211
Memory Characteristics of Doubly Stacked Nano-Floating Gate Memory Devices with Channels of Single ZnO Nanowires
Journal of Nanoscience and Nanotechnology Vol. 13, pp.6196-6198 (2013.09)
Sungsu Kim, Kyoungah Cho, Kiyeol Kwak, Sangsig Kim