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150 | Leakage current mechanism in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes |
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Solid-State Electronics, Vol. 56, pp. 219-222 (2011.02)
Eunae Chung, Youngpil Kim, Kabjin Nam, Sungsam Lee, Jiyoung Min, Yugyun Shin, Siyoung Choi, Gyoyoung Jin, Jootae Moon, Sangsig Kim