HOME > Publication > Journals
Journals
Welcome to KOREA nanotronics
| 150 | Leakage current mechanism in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes |
|---|
Solid-State Electronics, Vol. 56, pp. 219-222 (2011.02)
Eunae Chung, Youngpil Kim, Kabjin Nam, Sungsam Lee, Jiyoung Min, Yugyun Shin, Siyoung Choi, Gyoyoung Jin, Jootae Moon, Sangsig Kim
