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Welcome to KOREA nanotronics
90
Memory characteristics of MOS capacitors with Ge nanocrystal-embedded Al2O3 gate layers
Solid State Communications, Vol.143, No.11-12, pp550-552 (2007.9)
Byoungjun Park, Samjong Choi, Hyeryoung Lee, Kyoungah Cho, Sangsig Kim