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Welcome to KOREA nanotronics
| 294 | Electrical characteristics of gate-all-around Si1-x Gex-source TFETs |
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NANO KOREA 2020, Gyeonggi-do, Korea / 2020.07.01 - 2020.07.03
Juhee Jeon, Young-soo Park, Doohyeok Lim, Jaemin Son, and Sangsig Kim
