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| 356 | Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress |
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Japanese Journal of Applied Physics, Vol. 60, No. 09, 090903 (2021.08)
Hosang Lee, Kyoungah Cho, Heesung Kong, Seungjun Lee, Junhyung Lim, and Sangsig Kim
